参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current1.3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage-
Typical Turn-On Delay Time5 us
Rds On - Drain-Source Resistance350 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 us
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge-
Mounting StyleSMD/SMT
Minimum Operating Temperature- 40 C
Package / CaseSOT-223-3
Maximum Operating Temperature+ 125 C
ProductMOSFET Small Signal
CNHTS8541290000
ImageDiodes Incorporated ZXMS6004SGTA
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Channel ModeEnhancement
Fall Time15 uS
SeriesZXMS6004
SubcategoryMOSFETs
Factory Pack Quantity1000
Product CategoryMOSFET
BrandDiodes Incorporated
Unit Weight0.003951 oz
Product TypeMOSFET
DescriptionMOSFET 60V N-Ch Intellifet 500mohm 1.3A 480mJ
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation1.6 W
TradenameIntelliFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time10 us
Moisture Sensitivity Level1 (Unlimited)