参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage700 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current1.3 A
Vgs - Gate-Source Voltage- 5 V, + 5 V
QualificationAEC-Q101
Typical Turn-On Delay Time5 us
Rds On - Drain-Source Resistance500 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 us
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge-
Mounting StyleSMD/SMT
Package / CaseSOT-23F-3
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 125 C
Minimum Operating Temperature- 40 C
CNHTS8541290000
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXMS6004
Product TypeMOSFET
Channel ModeEnhancement
DescriptionMOSFET 60V N-Channel 500mohm 1.3A 90mJ
ManufacturerDiodes Incorporated
ImageDiodes Incorporated ZXMS6004FFQTA
TARIC8541290000
Product CategoryMOSFET
Fall Time15 uS
RoHS Details
Unit Weight1.269863 oz
SubcategoryMOSFETs
Pd - Power Dissipation1.5 W
USHTS8541290095
TradenameIntelliFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time10 us
Moisture Sensitivity Level1 (Unlimited)