参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage700 mV
TechnologySi
Id - Continuous Drain Current2.8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 5 V, + 5 V
Typical Turn-On Delay Time8.6 us
Rds On - Drain-Source Resistance75 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34 us
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge-
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-223-3
Minimum Operating Temperature- 40 C
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 125 C
CNHTS8541290000
ProductMOSFET Small Signal
TARIC8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
RoHS Details
ImageDiodes Incorporated ZXMS6006SGTA
Channel ModeEnhancement
SeriesZXMS600
SubcategoryMOSFETs
Fall Time15 uS
BrandDiodes Incorporated
Factory Pack Quantity1000
Unit Weight0.003951 oz
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET 60V N-CH INTELLIFET 100mOhm 2.8A 480mJ
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation1.6 W
Vds - Drain-Source Breakdown Voltage60 V
TradenameIntelliFET
Number of Channels1 Channel
Rise Time18 us
Moisture Sensitivity Level1 (Unlimited)