参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current230 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance7.5 Ohms
Transistor Type1 P-Channel
MXHTS85412101
KRHTS8541219000
Mounting StyleSMD/SMT
Qg - Gate Charge350 pC
Package / CaseDFN-1006-3
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageNexperia BSS84AKMB,315
Channel ModeEnhancement
Product TypeMOSFET
ManufacturerNexperia
USHTS8541210075
Unit Weight0.000024 oz
Factory Pack Quantity10000
Product CategoryMOSFET
DescriptionMOSFET P-Chan -50V -230mA
Part # Aliases934065863315
Pd - Power Dissipation715 mW
Vds - Drain-Source Breakdown Voltage50 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)