参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.77 V
TechnologySi
Id - Continuous Drain Current95 A
Transistor PolarityN-Channel
QualificationAEC-Q101
Rds On - Drain-Source Resistance4.3 mOhms
Transistor Type1 N-Channel
Qg - Gate Charge31 nC
Package / CaseLFPAK33-5
Mounting StyleSMD/SMT
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandNexperia
RoHS Details
ImageNexperia BUK9M4R3-40HX
Product CategoryMOSFET
Factory Pack Quantity1500
SubcategoryMOSFETs
ManufacturerNexperia
Product TypeMOSFET
Pd - Power Dissipation90 W
Part # Aliases934660792115
USHTS8541290040
DescriptionMOSFET BUK9M4R3-40HX
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)