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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max250
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO180 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max160 V
Continuous Collector Current0.6 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.2 V
Width3.93 mm
MXHTS85412101
DC Collector/Base Gain hfe Min80
Height4.7 mm
Length4.7 mm
KRHTS8541219000
CNHTS8541210000
Package / CaseTO-92-3
Mounting StyleThrough Hole
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 55 C
PackagingBulk
TARIC8541210000
Series2N5551
BrandON Semiconductor / Fairchild
RoHS Details
ImageON Semiconductor / Fairchild 2N5551BU
Unit Weight0.007055 oz
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity10000
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation625 mW
Part # Aliases2N5551BU_NL
USHTS8541210095
DescriptionBipolar Transistors - BJT NPN Transistor General Purpose
Moisture Sensitivity LevelNot Applicable