2N5551TFR

厂牌：onsemi

包装：REEL 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000047186393

描述：Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R

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商品参数

参数项参数值

DC Current Gain hFE Max250

Gain Bandwidth Product fT300 MHz

Collector- Base Voltage VCBO180 V

Maximum DC Collector Current0.6 A

Collector- Emitter Voltage VCEO Max160 V

Continuous Collector Current0.6 A

ConfigurationSingle

TechnologySi

Transistor PolarityNPN

Emitter- Base Voltage VEBO6 V

Collector-Emitter Saturation Voltage0.2 V

Width3.93 mm

MXHTS85412101

DC Collector/Base Gain hfe Min80

Height4.7 mm

Length4.7 mm

KRHTS8541219000

CNHTS8541210000

Package / CaseTO-92-3 Kinked Lead

Mounting StyleThrough Hole

JPHTS8541210101

Maximum Operating Temperature+ 150 C

CAHTS8541210000

Minimum Operating Temperature- 55 C

TARIC8541210000

PackagingCut Tape

PackagingReel

BrandON Semiconductor / Fairchild

Series2N5551

RoHS Details

ImageON Semiconductor / Fairchild 2N5551TFR

Product CategoryBipolar Transistors - BJT

Unit Weight0.008466 oz

SubcategoryTransistors

Factory Pack Quantity2000

ManufacturerON Semiconductor

Product TypeBJTs - Bipolar Transistors

Pd - Power Dissipation625 mW

Part # Aliases2N5551TFR_NL

USHTS8541210075

DescriptionBipolar Transistors - BJT NPN Transistor General Purpose

Moisture Sensitivity LevelNot Applicable