参数项参数值
参数项参数值
DC Current Gain hFE Max5
ConfigurationSingle
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max400 V
TechnologySi
Transistor PolarityNPN
KRHTS8541299000
Emitter- Base Voltage VEBO9 V
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 65 C
Length6.6 mm
Height2.4 mm
ImageSTMicroelectronics STD13003T4
Product CategoryBipolar Transistors - BJT
Maximum Operating Temperature+ 150 C
Package / CaseTO-252-3
DC Collector/Base Gain hfe Min5
DescriptionBipolar Transistors - BJT H/V FST SWCH PW TRNS NPN
PackagingCut Tape
PackagingMouseReel
PackagingReel
Width6.2 mm
Mounting StyleSMD/SMT
TARIC8541210000
BrandSTMicroelectronics
Factory Pack Quantity2500
MXHTS85412101
Product TypeBJTs - Bipolar Transistors
SeriesSTD13003
ManufacturerSTMicroelectronics
RoHS Details
SubcategoryTransistors
USHTS8541290095
Unit Weight0.063493 oz
CNHTS8541210000
Pd - Power Dissipation20000 mW
Moisture Sensitivity Level1 (Unlimited)