参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min200 at 2 mA, 5 V
Width0.8 mm
Height0.5 mm
Length1.2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-723-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
Pd - Power Dissipation600 mW
ImageON Semiconductor BC847BM3T5G
SeriesBC847BM3
BrandON Semiconductor
Factory Pack Quantity8000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerON Semiconductor
SubcategoryTransistors
USHTS8541210095
DescriptionBipolar Transistors - BJT 100mA 50V NPN SILCON
Moisture Sensitivity Level1 (Unlimited)