参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min200
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
BrandON Semiconductor
SeriesBC847BDW1
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
TARIC8541210000
Factory Pack Quantity3000
RoHS Details
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT Dual NPN Bipolar Transistor
ImageON Semiconductor NSVBC847BDW1T2G
Unit Weight0.000265 oz
SubcategoryTransistors
USHTS8541210095
Pd - Power Dissipation380 mW
Moisture Sensitivity Level1 (Unlimited)