SCT3080KLGC11

厂牌：ROHM Semiconductor

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000047267410

描述： MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOSMOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS

商品参数

参数项参数值

PackagingTube

Package / CaseTO-247-3

Mounting TypeThrough Hole

Operating Temperature175°C (TJ)

TechnologySiCFET (Silicon Carbide)

FET TypeN-Channel

Current - Continuous Drain (Id) @ 25°C31A (Tc)

Rds On (Max) @ Id, Vgs104mOhm @ 10A, 18V

FET Feature-

Power Dissipation (Max)165W (Tc)

Vgs(th) (Max) @ Id5.6V @ 5mA

Supplier Device PackageTO-247N

Grade-

Drive Voltage (Max Rds On, Min Rds On)18V

Vgs (Max)+22V, -4V

Drain to Source Voltage (Vdss)1200 V

Gate Charge (Qg) (Max) @ Vgs60 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds785 pF @ 800 V

Qualification-

Moisture Sensitivity Level1 (Unlimited)