参数项参数值
参数项参数值
Forward Transconductance - Min3.8 S
Vgs th - Gate-Source Threshold Voltage5.6 V
TechnologySiC
Id - Continuous Drain Current29 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 4 V, + 22 V
Typical Turn-On Delay Time4 ns
Rds On - Drain-Source Resistance104 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time17 ns
Qg - Gate Charge48 nC
Package / CaseTO-263-7L
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature-
Channel ModeEnhancement
Fall Time12 ns
PackagingCut Tape
PackagingReel
TARIC8541290000
ImageROHM Semiconductor SCT3080AW7TL
BrandROHM Semiconductor
Pd - Power Dissipation125 W
Factory Pack Quantity1000
Product TypeMOSFET
ManufacturerROHM Semiconductor
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET 650V 7PIN SIC 29A
Vds - Drain-Source Breakdown Voltage650 V
USHTS8541290095
Number of Channels1 Channel
Rise Time13 ns
Moisture Sensitivity Level1 (Unlimited)