SCT3080ALHRC11

厂牌:Rohm Semiconductor
包装:Tube 1
类目:元器件 > 分立器件 > MOSFET
编号:B000047267429
描述:MOSFET N-CH 650V 30A 175DEG C 134W; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:5.6V; Power Dissipation Pd:134W; Transistor Case Style:TO-247N; No. of Pins:3Pins; Operating Temperature Max:175蚓; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
最新价格近期成交32单+
数量价格(含税)
1¥178.4395
30¥125.7102
库存:417交期:4-7Days起订:1增量:1
数量:
X
178.4395(单价)
合计:
¥178.44
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min3.8 S
Vgs th - Gate-Source Threshold Voltage2.7 V
TechnologySiC
ImageROHM Semiconductor SCT3080ALHRC11
Transistor PolarityN-Channel
Id - Continuous Drain Current30 A
DescriptionMOSFET 650V 30A 134W SIC 80mOhm TO-247N
Vgs - Gate-Source Voltage- 4 V, + 22 V
Minimum Operating Temperature- 55 C
QualificationAEC-Q101
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance80 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time27 ns
PackagingTube
Package / CaseTO-247-3
Maximum Operating Temperature+ 175 C
Product CategoryMOSFET
Factory Pack Quantity30
Mounting StyleThrough Hole
Product TypeMOSFET
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
RoHS Details
TARIC8541290000
Qg - Gate Charge48 nC
SeriesSCT3x
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time16 ns
Pd - Power Dissipation134 W
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time26 ns
Moisture Sensitivity Level1 (Unlimited)