参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min4.4 S
Vgs th - Gate-Source Threshold Voltage5.6 V
TechnologySiC
ImageROHM Semiconductor SCT3080KRC14
Transistor PolarityN-Channel
Id - Continuous Drain Current31 A
DescriptionMOSFET 1200V N-CH SIC TRENCH
Vgs - Gate-Source Voltage- 4 V, + 22 V
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance80 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
PackagingTube
Package / CaseTO-247-4
Maximum Operating Temperature+ 175 C
Product CategoryMOSFET
Factory Pack Quantity30
Mounting StyleThrough Hole
Product TypeMOSFET
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
RoHS Details
TARIC8541290000
Qg - Gate Charge60 nC
SeriesSCT3x
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time12 ns
CNHTS8541290000
Pd - Power Dissipation165 W
Vds - Drain-Source Breakdown Voltage1200 V
Number of Channels1 Channel
Rise Time13 ns
Moisture Sensitivity Level1 (Unlimited)