SCT3080ALGC11

厂牌：ROHM

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000047267559

描述：ROHM - SCT3080ALGC11 - 碳化硅功率MOSFET, N沟道, 30 A, 650 V, 0.08欧姆, 18V, 5.6 V 库存分布: Shanghai: 0 Shanghai: 0 Shanghai: 0 Shanghai: 0 Shanghai: 0 UK: 103 SG: 0; packSize: 1; minimumOrderQty: 1; rohs: YES

下载数据手册

商品参数

参数项参数值

ConfigurationSingle

Forward Transconductance - Min3.8 S

TechnologySiC

Vgs th - Gate-Source Threshold Voltage2.7 V

Transistor PolarityN-Channel

Id - Continuous Drain Current30 A

KRHTS8541299000

Vgs - Gate-Source Voltage- 4 V, + 22 V

Minimum Operating Temperature- 55 C

JPHTS8541290100

CAHTS8541290000

Typical Turn-On Delay Time16 ns

Rds On - Drain-Source Resistance80 mOhms

Transistor Type1 N-Channel

Maximum Operating Temperature+ 175 C

Typical Turn-Off Delay Time27 ns

ImageROHM Semiconductor SCT3080ALGC11

Package / CaseTO-247-3

PackagingTube

BrandROHM Semiconductor

SubcategoryMOSFETs

Mounting StyleThrough Hole

TARIC8541290000

Product CategoryMOSFET

DescriptionMOSFET N-Ch 650V 30A Silicon Carbide SiC

ManufacturerROHM Semiconductor

Factory Pack Quantity450

Qg - Gate Charge48 nC

RoHS Details

MXHTS85412999

SeriesSCT3x

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Fall Time16 ns

Unit Weight0.211644 oz

CNHTS8541290000

Part # AliasesSCT3080AL

Pd - Power Dissipation134 W

Vds - Drain-Source Breakdown Voltage650 V

Number of Channels1 Channel

Rise Time26 ns

Moisture Sensitivity Level1 (Unlimited)