在线商城 
TPS1120DR
厂牌：Texas Instruments Inc
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000047268075
描述： Ships in 3-7 Days
商品参数
参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage- 1.5 V
TechnologySi
Id - Continuous Drain Current1.17 A
Transistor PolarityP-Channel
Height1.75 mm
Vgs - Gate-Source Voltage- 15 V, + 2 V
RoHS Details
Factory Pack Quantity2500
BrandTexas Instruments
Typical Turn-On Delay Time4.5 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Rds On - Drain-Source Resistance180 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time13 ns
Minimum Operating Temperature- 40 C
JPHTS8542390990
Package / CaseSOIC-8
TARIC8542399000
ManufacturerTexas Instruments
SubcategoryMOSFETs
CAHTS8542390000
ProductMOSFET Small Signal
Product TypeMOSFET
Width3.9 mm
Mounting StyleSMD/SMT
Qg - Gate Charge5.45 nC
ImageTexas Instruments TPS1120DR
MXHTS85423999
DescriptionMOSFET Dual P-Ch Enh-Mode MOSFET
Product CategoryMOSFET
SeriesTPS1120
USHTS8542390001
Channel ModeEnhancement
Unit Weight0.002677 oz
Fall Time10 ns
CNHTS8541290000
Pd - Power Dissipation840 mW
Vds - Drain-Source Breakdown Voltage15 V
Number of Channels2 Channel
Rise Time10 ns
TypePMOS Switches