参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.1 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min200
Width1.2 mm
Height0.55 mm
Length1.6 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
Unit Weight0.000106 oz
Pd - Power Dissipation357 mW
ImageON Semiconductor BC847BPDXV6T1G
SeriesBC847BPDXV6
BrandON Semiconductor
Factory Pack Quantity4000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerON Semiconductor
USHTS8541210095
DescriptionBipolar Transistors - BJT 100mA 50V Dual Complementary
Moisture Sensitivity Level1 (Unlimited)