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商品参数
参数项参数值
参数项参数值
PackagingCut Tape (CT)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs47.8mOhm @ 15A, 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id4.5V @ 31µA
Supplier Device PackagePG-TSDSON-8-34
Grade-
Drive Voltage (Max Rds On, Min Rds On)10V, 15V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds960 pF @ 100 V
Qualification-
Moisture Sensitivity Level1 (Unlimited)