参数项参数值
参数项参数值
Forward Transconductance - Min17 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current6.3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time6 ns
Rds On - Drain-Source Resistance38 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
Width3.5 mm
Height1.8 mm
Length6.5 mm
MXHTS85412999
Qg - Gate Charge15 nC
KRHTS8541299000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
Channel ModeEnhancement
Fall Time10 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
SeriesFDT439N
BrandON Semiconductor / Fairchild
Unit Weight0.003951 oz
RoHS Details
Factory Pack Quantity4000
ImageON Semiconductor / Fairchild FDT439N
Product CategoryMOSFET
Pd - Power Dissipation3 W
Part # AliasesFDT439N_NL
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
DescriptionMOSFET SOT-223 N-CH 30V
Number of Channels1 Channel
Rise Time10 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)