参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current6 A
Collector- Emitter Voltage VCEO Max60 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO6 V
Width3.5 mm
Length6.5 mm
Height1.57 mm
DC Collector/Base Gain hfe Min150
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541290000
BrandON Semiconductor
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
SeriesNSS60600
TARIC8541290000
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity1000
RoHS Details
DescriptionBipolar Transistors - BJT LO V PNP TRANSISTOR 60V 6.0A
ImageON Semiconductor NSS60600MZ4T1G
SubcategoryTransistors
Unit Weight0.003951 oz
USHTS8541290075
Pd - Power Dissipation2000 mW
Moisture Sensitivity Level1 (Unlimited)