参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min34 S
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current81 A
ImageInfineon Technologies BSC054N04NS G
Vgs - Gate-Source Voltage- 20 V, + 20 V
DescriptionMOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
Minimum Operating Temperature- 55 C
Height1.27 mm
Length5.9 mm
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance5.4 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time16 ns
PackagingReel
PackagingCut Tape
PackagingMouseReel
Package / CasePG-TDSON-8
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity5000
Width5.15 mm
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandInfineon Technologies
MXHTS85412999
RoHS Details
ManufacturerInfineon
TARIC8541290000
Qg - Gate Charge26 nC
SeriesOptiMOS 3
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time3.6 ns
Unit Weight0.003527 oz
CNHTS8541290000
Part # AliasesBSC54N4NSGXT SP000354808 BSC054N04NSGATMA1
Pd - Power Dissipation57 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time2.6 ns