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FQB8N60CTM
厂牌：onsemi
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000047280756
描述：MOSFET N-CH 600V 7.5A D2PAK
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min8.7 S
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current7.5 A
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time16.5 ns
Width9.65 mm
Rds On - Drain-Source Resistance1.2 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time81 ns
Height4.83 mm
Length10.67 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge36 nC
Package / CaseTO-263-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor / Fairchild FQB8N60CTM
SubcategoryMOSFETs
Channel ModeEnhancement
BrandON Semiconductor / Fairchild
SeriesFQB8N60C
Product TypeMOSFET
Factory Pack Quantity800
ManufacturerON Semiconductor
Unit Weight0.046296 oz
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET 600V N-Channel Adv Q-FET C-Series
Part # AliasesFQB8N60CTM_NL
Pd - Power Dissipation3.13 W
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time60.5 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)