参数项参数值
参数项参数值
Forward Transconductance - Min17 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.2 V
TechnologySi
Id - Continuous Drain Current40 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9 ns
Rds On - Drain-Source Resistance11 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
Width3.3 mm
Height1.1 mm
Length3.3 mm
MXHTS85412999
Qg - Gate Charge15 nC
KRHTS8541299000
Package / CasePG-TSDSON-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
Fall Time3 ns
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.005503 oz
RoHS Details
Pd - Power Dissipation50 W
SeriesOptiMOS 5
Part # AliasesBSZ110N08NS5 SP001154280
BrandInfineon Technologies
ImageInfineon Technologies BSZ110N08NS5ATMA1
Product TypeMOSFET
Factory Pack Quantity5000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage80 V
ManufacturerInfineon
Number of Channels1 Channel
Product CategoryMOSFET
Rise Time3 ns
TradenameOptiMOS
USHTS8541290095