参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current1.2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance400 mOhms
Transistor Type1 N-Channel
Width1.3 mm
Height1.1 mm
MXHTS85412999
Length2.9 mm
KRHTS8541299000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
ProductMOSFET Small Signal
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageInfineon / IR IRLML2803TRPBF
TARIC8541290000
Unit Weight0.000282 oz
RoHS Details
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation540 mW
BrandInfineon / IR
SubcategoryMOSFETs
Product CategoryMOSFET
ManufacturerInfineon
DescriptionMOSFET MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl
Vds - Drain-Source Breakdown Voltage30 V
USHTS8541290095
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)