参数项参数值
参数项参数值
DC Current Gain hFE Max160 at 500 mA, 1 V
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO32 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max20 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min160 at 500 mA, 1 V
Width2.6 mm
Height1.6 mm
Length4.6 mm
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
Unit Weight0.004603 oz
RoHS Details
Pd - Power Dissipation1200 mW
ImageNexperia BC869-25,115
Part # Aliases933975320115
BrandNexperia
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerNexperia
DescriptionBipolar Transistors - BJT TRANS MED PWR TAPE-7
Moisture Sensitivity Level1 (Unlimited)