参数项参数值
参数项参数值
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current16 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current8 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
MXHTS85412101
Length6.6 mm
Width6.2 mm
Height2.4 mm
KRHTS8541299000
Collector-Emitter Saturation Voltage1 V
DC Collector/Base Gain hfe Min60
Minimum Operating Temperature- 55 C
JPHTS8541290100
Package / CaseTO-252-3
CAHTS8541290000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity2500
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageSTMicroelectronics MJD45H11T4
BrandSTMicroelectronics
Product CategoryBipolar Transistors - BJT
RoHS Details
TARIC8541210000
DescriptionBipolar Transistors - BJT PNP Gen Pur Switch
SeriesMJD45H11
Product TypeBJTs - Bipolar Transistors
ManufacturerSTMicroelectronics
SubcategoryTransistors
Unit Weight0.063493 oz
USHTS8541290095
Pd - Power Dissipation20 W