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商品参数
参数项参数值
参数项参数值
Gain Bandwidth Product fT90 MHz
Collector- Base Voltage VCBO5 V
Maximum DC Collector Current8 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current8 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
MXHTS85412999
Length6.73 mm
Width6.22 mm
Height2.38 mm
KRHTS8541299000
Collector-Emitter Saturation Voltage1 V
DC Collector/Base Gain hfe Min60
Minimum Operating Temperature- 55 C
JPHTS8541290100
Package / CaseTO-252-3
CAHTS8541290000
CNHTS8541290000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity75
PackagingTube
ImageON Semiconductor MJD45H11G
Product CategoryBipolar Transistors - BJT
BrandON Semiconductor
RoHS Details
TARIC8541290000
DescriptionBipolar Transistors - BJT 8A 80V 20W PNP
SeriesMJD45H11
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.020706 oz
USHTS8541290075
Pd - Power Dissipation20 W
Moisture Sensitivity Level1 (Unlimited)