参数项参数值
参数项参数值
DC Current Gain hFE Max60 at 2 A, 1 V
Gain Bandwidth Product fT85 MHz
Maximum DC Collector Current16 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current8 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage1 V
Width6.22 mm
Length6.73 mm
Height2.38 mm
DC Collector/Base Gain hfe Min60
MXHTS85412999
KRHTS8541299000
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingReel
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
BrandON Semiconductor
SeriesMJD44H11
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
TARIC8541290000
Factory Pack Quantity2500
RoHS Details
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT SILICON Pwr TRANSISTOR
ImageON Semiconductor NJVMJD44H11T4G
Unit Weight0.012381 oz
SubcategoryTransistors
USHTS8541290095
Part # AliasesNJVMJD44H11T4G-VF01
Pd - Power Dissipation20 W
Moisture Sensitivity Level1 (Unlimited)