参数项参数值
参数项参数值
Gain Bandwidth Product fT80 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current- 16 A
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current- 8 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 1 V
DC Collector/Base Gain hfe Min60
Minimum Operating Temperature- 55 C
Package / CaseDPAK-3
CNHTS8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Factory Pack Quantity2500
ImageNexperia MJD45H11J
PackagingReel
PackagingCut Tape
Product TypeBJTs - Bipolar Transistors
BrandNexperia
DescriptionBipolar Transistors - BJT TRANS BIPOLAR
TARIC8541210000
RoHS Details
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerNexperia
USHTS8541290075
Part # Aliases934660547118
Pd - Power Dissipation20 W
Moisture Sensitivity Level1 (Unlimited)