参数项参数值
参数项参数值
Gain Bandwidth Product fT90 MHz
Collector- Base Voltage VCBO5 V
Maximum DC Collector Current8 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current8 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
MXHTS85412999
Length6.73 mm
Width2.38 mm
Height6.35 mm
KRHTS8541299000
Collector-Emitter Saturation Voltage1 V
DC Collector/Base Gain hfe Min60
Minimum Operating Temperature- 55 C
JPHTS8541290100
Package / CaseIPAK-3
CAHTS8541290000
CNHTS8541290000
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Factory Pack Quantity75
PackagingTube
ImageON Semiconductor MJD45H11-1G
BrandON Semiconductor
Product CategoryBipolar Transistors - BJT
RoHS Details
TARIC8541290000
DescriptionBipolar Transistors - BJT 8A 80V 20W PNP
SeriesMJD45H11
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.012346 oz
USHTS8541290075
Pd - Power Dissipation20 W
Moisture Sensitivity Level1 (Unlimited)