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MJD44H11-1G
厂牌：onsemi
包装：Tube 1
类目：元器件 > 分立器件 > 双极晶体管
编号：B000047506387
描述：TRANS POWER NPN 8A 80V STR DPAK
商品参数
参数项参数值
参数项参数值
Gain Bandwidth Product fT85 MHz
Collector- Base Voltage VCBO5 V
Maximum DC Collector Current8 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current8 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
MXHTS85412999
Width2.38 mm
Length6.73 mm
Height6.35 mm
KRHTS8541299000
Collector-Emitter Saturation Voltage1 V
DC Collector/Base Gain hfe Min60
Minimum Operating Temperature- 55 C
JPHTS8541290100
CNHTS8541290000
CAHTS8541290000
Package / CaseIPAK-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
PackagingTube
Factory Pack Quantity75
ImageON Semiconductor MJD44H11-1G
Product CategoryBipolar Transistors - BJT
BrandON Semiconductor
RoHS Details
TARIC8541290000
SeriesMJD44H11
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 8A 80V 20W NPN
SubcategoryTransistors
ManufacturerON Semiconductor
Unit Weight0.012346 oz
USHTS8541290095
Pd - Power Dissipation20 W
Moisture Sensitivity Level1 (Unlimited)