参数项参数值
参数项参数值
Gain Bandwidth Product fT85 MHz
Maximum DC Collector Current16 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current8 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage1 V
MXHTS85412999
DC Collector/Base Gain hfe Min60
KRHTS8541299000
Package / CaseTO-252-3
CNHTS8541290000
JPHTS8541290100
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingReel
TARIC8541290000
ImageON Semiconductor NJVMJD44H11RLG
RoHS Details
Factory Pack Quantity1800
ManufacturerON Semiconductor
SeriesMJD44H11
Unit Weight0.011288 oz
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT Bipolar Power Transistor, NPN, 8 A, 80 V, 20 Watt
SubcategoryTransistors
Pd - Power Dissipation20 W
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)