NJVMJD45H11T4G

厂牌：onsemi

包装：Tape & Reel (TR) 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000047506409

描述：ONSEMI - NJVMJD45H11T4G - Bipolar (BJT) Single Transistor, PNP, 80 V, 8 A, 20 W, TO-252 (DPAK), Surface Mount 库存分布: SG: 0 UK: 1325; packSize: 1; minimumOrderQty: 5; rohs: YES

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商品参数

参数项参数值

Gain Bandwidth Product fT90 MHz

Maximum DC Collector Current16 A

Collector- Emitter Voltage VCEO Max80 V

Continuous Collector Current8 A

ConfigurationSingle

TechnologySi

Transistor PolarityPNP

Emitter- Base Voltage VEBO5 V

QualificationAEC-Q101

Collector-Emitter Saturation Voltage1 V

DC Collector/Base Gain hfe Min60

MXHTS85412999

KRHTS8541299000

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Mounting StyleSMD/SMT

Package / CaseDPAK-3

Maximum Operating Temperature+ 150 C

CNHTS8541290000

PackagingCut Tape

PackagingMouseReel

PackagingReel

ImageON Semiconductor NJVMJD45H11T4G

TARIC8541290000

RoHS Details

SeriesMJD45H11

SubcategoryTransistors

Factory Pack Quantity2500

Product CategoryBipolar Transistors - BJT

BrandON Semiconductor

Product TypeBJTs - Bipolar Transistors

Unit Weight0.009185 oz

DescriptionBipolar Transistors - BJT BIP DPAK PNP 8A 80V TR

ManufacturerON Semiconductor

USHTS8541290095

Pd - Power Dissipation20 W

Moisture Sensitivity Level1 (Unlimited)