参数项参数值
参数项参数值
DC Current Gain hFE Max200
ImageSTMicroelectronics STN9360
DescriptionBipolar Transistors - BJT Hi Vltg fast-switch PNP pwr transistor
Maximum DC Collector Current- 0.5 A
Collector- Emitter Voltage VCEO Max- 600 V
Continuous Collector Current- 0.5 V
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 7 V
Collector-Emitter Saturation Voltage- 0.5 V
PackagingReel
PackagingMouseReel
PackagingCut Tape
Package / CaseSOT-223-4
Product CategoryBipolar Transistors - BJT
DC Collector/Base Gain hfe Min200
Factory Pack Quantity1000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Product TypeBJTs - Bipolar Transistors
BrandSTMicroelectronics
RoHS Details
ManufacturerSTMicroelectronics
SeriesSTN9360
SubcategoryTransistors
Unit Weight0.003951 oz
Pd - Power Dissipation1.6 W
Moisture Sensitivity Level1 (Unlimited)