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IPD050N10N5ATMA1
厂牌：Infineon
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000047511545
描述：Infineon IPD050N10N5ATMA1
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min48 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current80 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time13 ns
Rds On - Drain-Source Resistance4.3 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time27 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge64 nC
Mounting StyleSMD/SMT
Package / CaseDPAK-3
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingReel
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Factory Pack Quantity2500
CNHTS8541290000
BrandInfineon Technologies
DescriptionMOSFET DIFFERENTIATED MOSFETS
Channel ModeEnhancement
Product TypeMOSFET
ImageInfineon Technologies IPD050N10N5ATMA1
SeriesOptiMOS 5
ManufacturerInfineon
TARIC8541290000
Fall Time7 ns
Product CategoryMOSFET
RoHS Details
Unit Weight0.011270 oz
SubcategoryMOSFETs
Part # AliasesIPD050N10N5 SP001602184
Pd - Power Dissipation150 W
USHTS8541290095
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time7 ns
Moisture Sensitivity Level1 (Unlimited)