参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3 ns
Rds On - Drain-Source Resistance62 mOhms
Transistor Type1 N-Channel
Minimum Operating Temperature- 55 C
Package / CasePowerDI3333-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Qg - Gate Charge4.5 nC
PackagingReel
PackagingMouseReel
PackagingCut Tape
BrandDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMT10H072LFV-13
ManufacturerDiodes Incorporated
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS 61V-100V
Product CategoryMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time4.3 ns
Pd - Power Dissipation37.8 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time3.1 ns
Moisture Sensitivity Level1 (Unlimited)