参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current120 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time35 ns
Width4.4 mm
Rds On - Drain-Source Resistance3.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time70 ns
Height15.65 mm
Length10 mm
Qg - Gate Charge211 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Factory Pack Quantity500
BrandInfineon Technologies
ManufacturerInfineon
SeriesOptiMOS 3
Channel ModeEnhancement
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET N-Ch 120V 120A TO220-3 OptiMOS 3
ImageInfineon Technologies IPP041N12N3GXKSA1
Fall Time21 ns
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.211644 oz
Part # AliasesIPP041N12N3 G SP000652746
Pd - Power Dissipation300 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage120 V
Number of Channels1 Channel
Rise Time52 ns
Moisture Sensitivity Level1 (Unlimited)