SCT3030ALGC11

厂牌：ROHM Semiconductor

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000047650135

描述：SCT3030AL Series 650 V 70 A 39 mOhm N-Channel SiC Power Mosfet - TO-247N

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商品参数

参数项参数值

Forward Transconductance - Min9.4 S

ConfigurationSingle

TechnologySiC

Vgs th - Gate-Source Threshold Voltage2.7 V

Transistor PolarityN-Channel

Id - Continuous Drain Current70 A

Vgs - Gate-Source Voltage- 4 V, + 22 V

KRHTS8541299000

Typical Turn-On Delay Time22 ns

Minimum Operating Temperature- 55 C

JPHTS8541290100

CAHTS8541290000

RoHS Details

Rds On - Drain-Source Resistance30 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time48 ns

Package / CaseTO-247-3

Factory Pack Quantity450

BrandROHM Semiconductor

ImageROHM Semiconductor SCT3030ALGC11

TARIC8541290000

Mounting StyleThrough Hole

Maximum Operating Temperature+ 175 C

PackagingTube

ManufacturerROHM Semiconductor

Product CategoryMOSFET

SubcategoryMOSFETs

Qg - Gate Charge104 nC

DescriptionMOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS

MXHTS85412999

Product TypeMOSFET

SeriesSCT3x

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.211644 oz

Fall Time27 ns

CNHTS8541290000

Part # AliasesSCT3030AL

Pd - Power Dissipation262 W

Vds - Drain-Source Breakdown Voltage650 V

Number of Channels1 Channel

Rise Time41 ns

Moisture Sensitivity Level1 (Unlimited)