参数项参数值
参数项参数值
DC Current Gain hFE Max475 at - 2 mA, - 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current- 100 mA
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 200 mV
DC Collector/Base Gain hfe Min220 at - 2 mA, - 5 V
MXHTS85412101
KRHTS8541219000
Package / CaseDFN-1006-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541210000
Unit Weight0.000024 oz
RoHS Details
Pd - Power Dissipation250 mW
ImageNexperia BC856BMBYL
Part # Aliases934069543315
BrandNexperia
Factory Pack Quantity10000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerNexperia
SubcategoryTransistors
USHTS8541210075
DescriptionBipolar Transistors - BJT TRANS BIPOLAR
Moisture Sensitivity Level1 (Unlimited)