参数项参数值
参数项参数值
DC Current Gain hFE Max180 at 10 mA, 2 V
Gain Bandwidth Product fT190 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current5 A
Collector- Emitter Voltage VCEO Max50 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO7 V
Width1.4 mm
Height1 mm
DC Collector/Base Gain hfe Min180 at 10 mA, 2 V, 200 at 500 mA, 2 V, 70 at 5 A, 2 V, 12 at 10 A, 2 V
MXHTS85412999
Length3.05 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageDiodes Incorporated ZXTP2025FTA
TARIC8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
RoHS Details
SeriesZXTP2025
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Unit Weight0.000282 oz
DescriptionBipolar Transistors - BJT PNP 50V 5A 3-PIN
ManufacturerDiodes Incorporated
USHTS8541290075
Pd - Power Dissipation1560 mW