参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min24 S
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current40 A
ImageInfineon Technologies BSZ097N04LS G
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 20 V, + 20 V
DescriptionMOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3
Height1.1 mm
Length3.3 mm
Typical Turn-On Delay Time3.5 ns
Transistor Type1 N-Channel
Typical Turn-Off Delay Time16 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Package / CasePG-TSDSON-8
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity5000
Width3.3 mm
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandInfineon Technologies
SeriesOptiMOS 3
MXHTS85412999
ManufacturerInfineon
TARIC8541290000
RoHS Details
Qg - Gate Charge18 nC
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time2.8 ns
Unit Weight0.009877 oz
CNHTS8541290000
Part # AliasesBSZ97N4LSGXT SP000388296 BSZ097N04LSGATMA1
Pd - Power Dissipation35 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time2.4 ns