参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage2.1 V
Transistor PolarityN-Channel
Id - Continuous Drain Current17 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
Length10 mm
JPHTS8541290100
Minimum Operating Temperature- 55 C
Height4.4 mm
CAHTS8541290000
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance250 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time72 ns
Maximum Operating Temperature+ 150 C
ImageInfineon Technologies SPB17N80C3ATMA1
Package / CaseTO-263-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
Width9.25 mm
Product CategoryMOSFET
DescriptionMOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3
Mounting StyleSMD/SMT
TARIC8541290000
Factory Pack Quantity1000
ManufacturerInfineon
Product TypeMOSFET
Qg - Gate Charge117 nC
BrandInfineon Technologies
RoHS Details
MXHTS85412999
SubcategoryMOSFETs
SeriesCoolMOS C3
USHTS8541290095
Channel ModeEnhancement
Fall Time12 ns
Unit Weight0.068654 oz
CNHTS8541290000
Part # AliasesSPB17N80C3 SP000013370
Pd - Power Dissipation227 W
TradenameCoolMOS
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time15 ns
Moisture Sensitivity Level1 (Unlimited)