参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min10 s
TechnologySi
Vgs th - Gate-Source Threshold Voltage1.5 V
Transistor PolarityN-Channel
Id - Continuous Drain Current4.3 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time6 ns
Rds On - Drain-Source Resistance68 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14 ns
Package / CaseSOT-23-3
ImageVishay / Siliconix SQ2362ES-T1_GE3
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 175 C
BrandVishay / Siliconix
Mounting StyleSMD/SMT
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET N-Channel 60V AEC-Q101 Qualified
ManufacturerVishay
Factory Pack Quantity3000
Qg - Gate Charge7.6 nC
RoHS Details
SeriesSQ
Product TypeMOSFET
Channel ModeEnhancement
Fall Time18 ns
Pd - Power Dissipation3 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time20 ns
Moisture Sensitivity Level1 (Unlimited)