参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage450 mV
TechnologySi
Id - Continuous Drain Current900 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
CNHTS8541210000
Typical Turn-On Delay Time2.5 ns
Rds On - Drain-Source Resistance730 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time477 ns
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Qg - Gate Charge5.5 nC
BrandDiodes Incorporated
TARIC8541290000
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMN3731U-7
RoHS Details
Product CategoryMOSFET
DescriptionMOSFET MOSFET BVDSS: 25V-30V
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time123 ns
USHTS8541290095
Unit Weight1 oz
Pd - Power Dissipation580 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time3.1 ns
Moisture Sensitivity Level1 (Unlimited)