参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current35 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
CAHTS8541290000
Product CategoryMOSFET
Minimum Operating Temperature- 55 C
ImageVishay Semiconductors SUD35N10-26P-GE3
Rds On - Drain-Source Resistance26 mOhms
Maximum Operating Temperature+ 175 C
Package / CaseTO-252-3
PackagingMouseReel
PackagingCut Tape
PackagingReel
DescriptionMOSFET 100V 35A 83W 26mohm @ 10V
Mounting StyleSMD/SMT
TARIC8541290000
Factory Pack Quantity2000
ManufacturerVishay
Product TypeMOSFET
BrandVishay Semiconductors
Qg - Gate Charge47 nC
RoHS Details
MXHTS85412999
SubcategoryMOSFETs
SeriesSUD
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.050717 oz
CNHTS8541290000
Pd - Power Dissipation83 W
TradenameTrenchFET
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)