NSVBCP68T1G

厂牌：onsemi

包装：Cut Tape (CT) 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000047741608

描述：Bipolar Transistors - BJT NPN Bipolar Transistor

商品参数

参数项参数值

DC Current Gain hFE Max50 at 5 mA, 10 V

Gain Bandwidth Product fT60 MHz

Collector- Base Voltage VCBO25 V

Maximum DC Collector Current1 A

Collector- Emitter Voltage VCEO Max20 V

ConfigurationSingle

TechnologySi

Transistor PolarityNPN

Emitter- Base Voltage VEBO5 V

Width3.5 mm

DC Collector/Base Gain hfe Min50 at 5 mA, 10 V, 85 at 500 mA, 1 V, 60 at 1 A, 1 V

Height1.57 mm

Length6.5 mm

Package / CaseSOT-223-4

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 65 C

PackagingMouseReel

PackagingReel

PackagingCut Tape

TARIC8541210000

ImageON Semiconductor NSVBCP68T1G

RoHSN

Factory Pack Quantity1000

ManufacturerON Semiconductor

Unit Weight0.006632 oz

BrandON Semiconductor

Product TypeBJTs - Bipolar Transistors

Product CategoryBipolar Transistors - BJT

DescriptionBipolar Transistors - BJT LOW VOLTAGE-HIGH CURRENT

Pd - Power Dissipation1500 mW

SubcategoryTransistors

USHTS8541210095

Moisture Sensitivity Level1 (Unlimited)