2N6661

2N6661

厂牌：--

包装：BULK 1

类目：元器件 > 分立器件 > MOSFET

编号：B000047741809

描述：TRANSISTOR,MOSFET,N-CHANNEL,90V V(BR)DSS,2A I(D),TO-39 Ships in 3-7 Days

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min170 mS

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage800 mV

TechnologySi

Id - Continuous Drain Current350 mA

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time10 ns

Rds On - Drain-Source Resistance4 Ohms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time10 ns

MXHTS85412101

KRHTS8541219000

Package / CaseTO-39-3

Mounting StyleThrough Hole

JPHTS8541210101

CAHTS8541210000

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

BrandMicrochip Technology

PackagingBulk

CNHTS8541290000

ManufacturerMicrochip

Product CategoryMOSFET

Product TypeMOSFET

TARIC8541210000

RoHS Details

Factory Pack Quantity500

ImageMicrochip Technology 2N6661

SubcategoryMOSFETs

DescriptionMOSFET 90V 4Ohm

Unit Weight0.039133 oz

USHTS8541210095

Pd - Power Dissipation6.25 W

Vds - Drain-Source Breakdown Voltage10 V

Number of Channels1 Channel

TypeFET