参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.7 V
DC Collector/Base Gain hfe Min160
Width1.35 mm
Height1 mm
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.000176 oz
RoHS Details
Pd - Power Dissipation200 mW
SeriesBC817
ImageDiodes Incorporated BC817-25W-7
BrandDiodes Incorporated
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes Incorporated
SubcategoryTransistors
USHTS8541210095
DescriptionBipolar Transistors - BJT NPN SURFACE MOUNT SMALL SIGNAL TRANS
Moisture Sensitivity Level1 (Unlimited)