参数项参数值
参数项参数值
Forward Transconductance - Min80 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage800 mV
TechnologySi
Id - Continuous Drain Current170 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time2.94 ns
Width1.25 mm
Rds On - Drain-Source Resistance10 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time8.4 ns
Height1 mm
Length2 mm
MXHTS85412999
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541290000
RoHS Details
ImageON Semiconductor / Fairchild BSS123W
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
Channel ModeEnhancement
BrandON Semiconductor / Fairchild
Fall Time5.73 ns
SeriesBSS123W
Product TypeMOSFET
Factory Pack Quantity3000
ManufacturerON Semiconductor
Unit Weight0.000176 oz
USHTS8541210095
Product CategoryMOSFET
DescriptionMOSFET 100V NCH ENHANCEMENT MODE TRANSISTOR
Pd - Power Dissipation200 mW
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time1.24 ns
Moisture Sensitivity Level1 (Unlimited)