参数项参数值
参数项参数值
Forward Transconductance - Min0.08 S, 0.37 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current170 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8 ns
Width1.35 mm
Rds On - Drain-Source Resistance6 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time13 ns
Height1 mm
Length2.2 mm
MXHTS85411001
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
ProductMOSFET Small Signal
TARIC8541100000
RoHS Details
ImageDiodes Incorporated BSS123W-7-F
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
Channel ModeEnhancement
BrandDiodes Incorporated
Fall Time8 ns
SeriesBSS123W
Product TypeMOSFET
Factory Pack Quantity3000
ManufacturerDiodes Incorporated
Unit Weight0.000176 oz
USHTS8541100080
Product CategoryMOSFET
DescriptionMOSFET 100V 200mW
Pd - Power Dissipation200 mW
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time8 ns
TypeEnhancement Mode Field Effect Transistor
Moisture Sensitivity Level1 (Unlimited)